Large capacity and manufacturing level of IF power supply
The large-capacity technology of IF power supplies can be divided into two categories from the perspective of circuits:
Classes are strings and parallels of devices, and cells are connected in parallel with multiple power supplies. In the string and parallel mode of the device,
The equalization of the series devices and the current sharing of the parallel devices must be carefully addressed. Device manufacturing process
And the discreteness of the parameters limits the number of strings and parallels of the device, and the more the number of strings and parallels, the
The worse the dependency. As seen in Figure 2_2, there is an overlap between the MOSFET and the IGBT power supply, since the MOSFET is
Multi-carrier devices, there is no storage time, so its switching time is much smaller than IGBT; MOS-
FET does not have secondary breakdown problem, has a rectangular safety zone, small driving power, easy parallel connection, etc.
Often suitable for high frequency and high power intermediate frequency power supply. The problem that can be caused by using MOSFET is because of it
It is a high-speed switch, which is demanding on wiring, and the on-state loss of the high-voltage MOSFET is large, at the same frequency.
Try to use IGBT as much as possible.
Parallel technology of multiple power supplies is effective for further capacity expansion based on device string and parallel technology
means. With reliable power supply parallel technology, it can be easily passed in the case of a single unit capacity
The parallel operation mode results in a large-capacity device, in which case each single unit is only one unit or one module of the device.
In addition to the parallel connection of the power supply to expand the capacity, there are two (or more) power supplies as shown in Figure 2-42.
Parallel working structure
Manufacture level of intermediate frequency power supply
The figure shows the manufacturing level of some MOSFET IF power supplies. High-power high-frequency IGBT
It is the first choice for many IF power supplies with a frequency of up to 200 kHz and power up to mW class.
achieve. In 1993, Spain reported 30-600kW, 5000 kHz current-type parallel inverter induction heating
Power supply; in 1994, Japan developed 1200kW, 50kHz current-type parallel inverter with IGBT
The power should be heated; serialized super-audio induction heating in other countries such as the United Kingdom, France, Switzerland, etc.
The capacity of the power supply has also reached hundreds of kilowatts. Domestic super audio IF power series products reached
10 N5000kW, 10-50kHz manufacturing level. In general, China's transistor solid state induction plus
There is still a certain gap between the thermal power supply and the foreign power in terms of frequency power.
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