Technology Trends Grooved Semiconductor’s acquisition of IBM’s microelectronics business has resulted in a series of differentiated technologies that can be used to enhance its company’s major growth in military, Internet of Things (IoT), big data, and high-performance computing. The product portfolio in the market not only solidifies its leading position on the road to 10nm, 7nm, and more advanced processes, but also introduces the “22FDX†of ultra-low power requirements for the new generation of networking equipment in the new semiconductor process. "The platform, which offers performance and power consumption comparable to FinFETs at a cost equivalent to the 28-nm planar transistor process, provides an optimal solution for the rapidly growing mobile, IoT, RF connectivity and networking markets."
Although some devices require the ultimate performance of 3-D FinFET transistors, most wireless devices require a better balance between performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
Grooved Semiconductor’s acquisition of IBM’s microelectronics business resulted in a series of differentiated technologies that can be used to enhance its company’s major growth markets in military, Internet of Things (IoT), big data, and high-performance computing. The product portfolio not only solidifies its leading position on the road to 10nm, 7nm and more advanced processes, but also introduces the “22FDX†platform for ultra-low power requirements of new generation networking devices in new semiconductor processes. This platform delivers performance and power consumption comparable to FinFETs at a cost equivalent to a 28-nm planar transistor process, providing an optimal solution for the rapidly growing mobile, IoT, RF connectivity and networking markets.
Although some devices require the ultimate performance of 3D FinFET transistors, most wireless devices require a better balance of performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
In the field of RF, Groovy Semiconductor currently holds a leading position in the wireless front-end module market. IBM has developed world-class RF silicon-on-insulator (RFSOI) and high-performance silicon germanium (SiGe) technologies that are highly complementary to the existing mainstream technology portfolio of Groovy Semiconductor. The company will continue to increase its investment to launch its next-generation RFSOI roadmap and capture business opportunities in the automotive and home markets.
Sanjay Jha, Chief Executive Officer of Geoflight Semiconductor, said: “The 22FDX platform enables our customers to achieve the best balance between performance, power consumption and cost. The platform is the first in the industry to provide real-time system software for transistor characteristics. Control capabilities: System designers can dynamically balance power consumption, performance, and leakage. In addition, the platform offers the best scalability and the highest energy efficiency for RF and analog integration in networking applications.†22FDX uses Grooved The company is producing a 28nm platform on the most advanced 300mm production line in Dresden, Germany.
The process builds on the continued investment in the largest semiconductor fab in Europe in the last 20 years and opens a new chapter in the development history of the “Saxon Silicon Valleyâ€. Grooved Semiconductor has invested US$250 million in the 22FDX platform in Dresden for technology research and development and the launch of 22FDX production, which has increased the company’s total investment in Fab1 to more than US$5 billion since 2009. The company will also increase investment to increase productivity to meet customer needs. GlobalFoundry is working with a number of leading European R&D and industry organizations to build a strong ecosystem for 22FDX, reduce time-to-market, and develop a comprehensive roadmap for it. The company now offers a design starter kit and an earlier version of the Process Design Kit (PDK), and will start ramping up production in the second half of 2016.
Chip suppliers support FD-SOI process
Jean-Marc Chery, chief operating officer of STMicroelectronics, said: "Glofangd Semiconductor's FDX platform uses an advanced FD-SOI transistor structure, which is the result of long-term cooperation between the two parties. FD-SOI confirms and enhances this process. Strong growth momentum, expanded ecosystems, and secured a high volume supply source. FD-SOI is the ideal technology for IoT devices and other power-sensitive devices to stay on-line forever and achieve low power consumption.†Freescale MCUs RonMartino, vice president of Applications Processors and Advanced Technologies, Business Group, said: “The Freescale i.MX7 family of new generations of application processors utilizes FD-SOI transistor architecture to achieve a wide variety of industry-leading, ultra-low power consumption for automotive, industrial and consumer applications. On-demand performance solutions.The 22FDX platform from Globede Semiconductor has enabled FD-SOI's mass production capacity to exceed 28nm, and has been reducing costs, improving performance, and optimizing power consumption."
Will Abbey, general manager of the ARM entity's IP design division, said: "The world of mobile devices and IoT devices interconnects relies on SoCs that are optimized for performance, power, and cost. We are working closely with Globodev to provide users. The required IP ecosystem allows customers to truly benefit from the unique value of 22FDX technology," said Wayne Dai, President and CEO of VeriSilicon Holdings Co. Ltd.: “VeriSilicon has experience designing IoT SoCs using FD-SOI technology, and Demonstrate the advantages of FD-SOI in creating ultra-low power consumption and low power consumption applications.We look forward to working with Globodev Semiconductors on its 22FDX platform to launch various smart phones, smart homes, smart cars and the Chinese market. Power, performance, and cost-optimized designs,†said Tony King-Smith, executive vice president of marketing at Imagination Technologies, “The next generation of connected devices, such as wearables, IoT, mobile, and consumer, require an optimal balance of performance, power, and cost. Semiconductor Solutions, a new 22FDX process from Globefind, combined with Imagination Pan advanced IP portfolio - including PowerVR multimedia programs, MIPSCPU and Ensigma communications solutions, will be able to effectively help each other mutual customers introduce more differentiated and innovative products. "
HandelJones, founder and CEO of IBS, Inc., said: “The FD-SOI process can provide a multi-node, low-cost roadmap for wearables, consumer, multimedia, automotive and other applications. 22FDX will be deployed by Groovy Semiconductor. The best low-power FD-SOI process is integrated into a low-cost platform with strong demand growth." CEO of CEA-Leti Marie No? lleSemeria said: "FD-SOI can significantly improve performance, reduce power consumption, and minimize the adjustment of existing design and manufacturing methods. Through cooperation, we will be able to use mature and convenient design and manufacturing technology to successfully produce the Gro Fangde Semiconductor's 22FDX platform for technology interconnection,†said Paul Boudre, Soitec’s CEO. “This news from Groovy Semiconductor is an important milestone in building a new generation of low-power electronic devices. We are very pleased to be a partner German semiconductor's strategic partner. Our ultra-thin SOI substrate has been prepared for 22FDX production."
Grooved Semiconductor’s acquisition of IBM’s microelectronics business resulted in a series of differentiated technologies that can be used to enhance its company’s major growth markets in military, Internet of Things (IoT), big data, and high-performance computing. The product portfolio not only solidifies its leading position on the road to 10nm, 7nm and more advanced processes, but also introduces the “22FDX†platform for ultra-low power requirements of new generation networking devices in new semiconductor processes. This platform delivers performance and power consumption comparable to FinFETs at a cost equivalent to a 28-nm planar transistor process, providing an optimal solution for the rapidly growing mobile, IoT, RF connectivity and networking markets.
Although some devices require the ultimate performance of 3-D FinFET transistors, most wireless devices require a better balance between performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
Although some devices require the ultimate performance of 3-D FinFET transistors, most wireless devices require a better balance between performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
Grooved Semiconductor’s acquisition of IBM’s microelectronics business resulted in a series of differentiated technologies that can be used to enhance its company’s major growth markets in military, Internet of Things (IoT), big data, and high-performance computing. The product portfolio not only solidifies its leading position on the road to 10nm, 7nm and more advanced processes, but also introduces the “22FDX†platform for ultra-low power requirements of new generation networking devices in new semiconductor processes. This platform delivers performance and power consumption comparable to FinFETs at a cost equivalent to a 28-nm planar transistor process, providing an optimal solution for the rapidly growing mobile, IoT, RF connectivity and networking markets.
New Breakthrough in Chip Fields Semiconductor FD-SOI Technology Takes Eyeball
Although some devices require the ultimate performance of 3D FinFET transistors, most wireless devices require a better balance of performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
In the field of RF, Groovy Semiconductor currently holds a leading position in the wireless front-end module market. IBM has developed world-class RF silicon-on-insulator (RFSOI) and high-performance silicon germanium (SiGe) technologies that are highly complementary to the existing mainstream technology portfolio of Groovy Semiconductor. The company will continue to increase its investment to launch its next-generation RFSOI roadmap and capture business opportunities in the automotive and home markets.
Sanjay Jha, Chief Executive Officer of Geoflight Semiconductor, said: “The 22FDX platform enables our customers to achieve the best balance between performance, power consumption and cost. The platform is the first in the industry to provide real-time system software for transistor characteristics. Control capabilities: System designers can dynamically balance power consumption, performance, and leakage. In addition, the platform offers the best scalability and the highest energy efficiency for RF and analog integration in networking applications.†22FDX uses Grooved The company is producing a 28nm platform on the most advanced 300mm production line in Dresden, Germany.
The process builds on the continued investment in the largest semiconductor fab in Europe in the last 20 years and opens a new chapter in the development history of the “Saxon Silicon Valleyâ€. Grooved Semiconductor has invested US$250 million in the 22FDX platform in Dresden for technology research and development and the launch of 22FDX production, which has increased the company’s total investment in Fab1 to more than US$5 billion since 2009. The company will also increase investment to increase productivity to meet customer needs. GlobalFoundry is working with a number of leading European R&D and industry organizations to build a strong ecosystem for 22FDX, reduce time-to-market, and develop a comprehensive roadmap for it. The company now offers a design starter kit and an earlier version of the Process Design Kit (PDK), and will start ramping up production in the second half of 2016.
Chip suppliers support FD-SOI process
Jean-Marc Chery, chief operating officer of STMicroelectronics, said: "Glofangd Semiconductor's FDX platform uses an advanced FD-SOI transistor structure, which is the result of long-term cooperation between the two parties. FD-SOI confirms and enhances this process. Strong growth momentum, expanded ecosystems, and secured a high volume supply source. FD-SOI is the ideal technology for IoT devices and other power-sensitive devices to stay on-line forever and achieve low power consumption.†Freescale MCUs RonMartino, vice president of Applications Processors and Advanced Technologies, Business Group, said: “The Freescale i.MX7 family of new generations of application processors utilizes FD-SOI transistor architecture to achieve a wide variety of industry-leading, ultra-low power consumption for automotive, industrial and consumer applications. On-demand performance solutions.The 22FDX platform from Globede Semiconductor has enabled FD-SOI's mass production capacity to exceed 28nm, and has been reducing costs, improving performance, and optimizing power consumption."
Will Abbey, general manager of the ARM entity's IP design division, said: "The world of mobile devices and IoT devices interconnects relies on SoCs that are optimized for performance, power, and cost. We are working closely with Globodev to provide users. The required IP ecosystem allows customers to truly benefit from the unique value of 22FDX technology," said Wayne Dai, President and CEO of VeriSilicon Holdings Co. Ltd.: “VeriSilicon has experience designing IoT SoCs using FD-SOI technology, and Demonstrate the advantages of FD-SOI in creating ultra-low power consumption and low power consumption applications.We look forward to working with Globodev Semiconductors on its 22FDX platform to launch various smart phones, smart homes, smart cars and the Chinese market. Power, performance, and cost-optimized designs,†said Tony King-Smith, executive vice president of marketing at Imagination Technologies, “The next generation of connected devices, such as wearables, IoT, mobile, and consumer, require an optimal balance of performance, power, and cost. Semiconductor Solutions, a new 22FDX process from Globefind, combined with Imagination Pan advanced IP portfolio - including PowerVR multimedia programs, MIPSCPU and Ensigma communications solutions, will be able to effectively help each other mutual customers introduce more differentiated and innovative products. "
HandelJones, founder and CEO of IBS, Inc., said: “The FD-SOI process can provide a multi-node, low-cost roadmap for wearables, consumer, multimedia, automotive and other applications. 22FDX will be deployed by Groovy Semiconductor. The best low-power FD-SOI process is integrated into a low-cost platform with strong demand growth." CEO of CEA-Leti Marie No? lleSemeria said: "FD-SOI can significantly improve performance, reduce power consumption, and minimize the adjustment of existing design and manufacturing methods. Through cooperation, we will be able to use mature and convenient design and manufacturing technology to successfully produce the Gro Fangde Semiconductor's 22FDX platform for technology interconnection,†said Paul Boudre, Soitec’s CEO. “This news from Groovy Semiconductor is an important milestone in building a new generation of low-power electronic devices. We are very pleased to be a partner German semiconductor's strategic partner. Our ultra-thin SOI substrate has been prepared for 22FDX production."
Grooved Semiconductor’s acquisition of IBM’s microelectronics business resulted in a series of differentiated technologies that can be used to enhance its company’s major growth markets in military, Internet of Things (IoT), big data, and high-performance computing. The product portfolio not only solidifies its leading position on the road to 10nm, 7nm and more advanced processes, but also introduces the “22FDX†platform for ultra-low power requirements of new generation networking devices in new semiconductor processes. This platform delivers performance and power consumption comparable to FinFETs at a cost equivalent to a 28-nm planar transistor process, providing an optimal solution for the rapidly growing mobile, IoT, RF connectivity and networking markets.
Although some devices require the ultimate performance of 3-D FinFET transistors, most wireless devices require a better balance between performance, power, and cost. The 22FDX uses the industry's first 22nm 2D fully depleted planar transistor technology (FD-SOI) process to provide a best path for cost-sensitive applications. With the industry's lowest 0.4 volt operating voltage, the platform achieves ultra-low dynamic power, lower thermal effects, and more sophisticated end product specifications. The platform offers 20% smaller chip size than the 28nm process, 10% less mask, and nearly 50% less immersion lithography than the foundryFinFET process, delivering the best combination of performance, power, and cost for networked devices. point.
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