In the process of splitting water using solar energy, materials like silicon and gallium arsenide—commonly used for light absorption—are prone to corrosion when exposed to aqueous solutions, which can degrade their performance over time. Recently, researchers at the California Institute for Artificial Photosynthesis (JCAP) made a breakthrough by developing a protective method for these semiconductor materials.
They employed atomic layer deposition to create a thin, electrically conductive TiO2 layer on the surface of single-crystal silicon, gallium arsenide, or gallium phosphide. This special TiO2 film, referred to as "leakage TiO2," has a thickness ranging from 4 to 143 nanometers. What makes it unique is its ability to allow electricity to pass through while still maintaining optical transparency. This means it effectively shields the semiconductor from chemical corrosion without compromising its light-absorbing properties.
To further enhance the system, the team added small "islands" of nickel oxide, about 100 nanometers thick, on top of the TiO2 layer. These islands act as efficient catalysts for the water-splitting reaction, helping to drive the process more effectively.
Although this approach shows promise for protecting semiconductors during the oxygen evolution reaction in water splitting, the researchers note that it’s still unclear whether the same coating can be applied using simpler and more cost-effective methods, such as spraying. Additionally, while the experiments were conducted under continuous light for several hundred hours, long-term stability and durability remain untested.
This development marks an important step forward in making solar-powered water splitting more viable and durable. With further research, this technology could play a key role in sustainable hydrogen production and renewable energy systems.
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